| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide plasma processing system and method capable of producing a semiconductor integrated circuit at a low cost using a wafer of large diameter. <P>SOLUTION: The plasma processing system comprises a vacuum processing chamber 101, a means for supplying gas to the vacuum processing chamber 101, a plasma generating means 107, and an electrode 103 for mounting a wafer 104 and being applied with a voltage. The electrode 103 mounts a peripheral member 121 being applied with a voltage at the periphery thereof wherein the ratio of the voltage being applied to the peripheral member 121 to the voltage being applied to the electrode 103 is variable. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
