| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To deal with the improvement of the degree of the wiring freedom of a semiconductor device, the securing of its GND power supply, and its heat radiating reliability for the increase of its mounting density. <P>SOLUTION: In the semiconductor device, a first semiconductor chip 3a is bonded by a bonding paste 4a to the surface side of a heat radiating plate and die pad 2a in a lead frame 1, and the bottom-surface side of a second semiconductor chip 3b is die-bonded via a bonding sheet 4b onto the element-surface of the first semiconductor chip 3a. Then, an enclosure molding by a sealing resin 6 is so performed as to package the two chips. Also, in order to improve the heat radiating quality of the device, the heat radiating plate and die pad 2a bonded to the rear surface of the first semiconductor chip 3a is stored with volume storable in a semiconductor package. Further, from the necessity for improving the heat radiating quality of an inner lead 1a, in order to overlap just under side of the first semiconductor chip 3a, a space is so interposed between the inner lead portion 1a and the rear surface of the first semiconductor chip 3a as not to contact both electrically with each other, by providing a protruding portion in the heat radiating plate and die pad 2a. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
