| 摘要 |
A nonvolatile semiconductor memory device comprises a memory cell array in which memory cells each holding memory cell information are arrayed, reference cells which supply different reference currents respectively, and a read-out circuit. When reading the memory cell information from a selected one of the memory cells, the read-out circuit is brought into conduction to a first global bit line which is connected to a bit line of the selected memory cell, and brought into conduction to one of a plurality of second global bit lines respectively which are provided near the first global bit line and connected to bit lines of non-selected memory cells but not connected to the bit line of the selected memory cell, so that the memory cell information is determined by comparing a read-out current from the selected memory cell with each of the reference currents from the reference cells.
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