发明名称 PRODUCTION METHOD OF ELECTRO-OPTICAL DEVICE, ELECTRO-OPTICAL DEVICE AND ELECTRONIC APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide an electro-optical device in which lattice defect, or the like, of a semiconductor layer 220 can be repaired while enhancing adhesion of the semiconductor layer 220 and a supporting substrate 500. SOLUTION: The production method of an electro-optical device comprises a step for sticking a semiconductor substrate to the surface of a supporting substrate 500, step (A) for forming a semiconductor layer 220 by separating the semiconductor substrate in a hydrogen ion implantation layer, and step (B) for melting the surface layer part of the semiconductor layer 220 by irradiating it with a laser beam having an absorption wavelength of the semiconductor layer 220. Recrystallization can be carried out using regular crystal lattice at a lower layer part as nucleus by melting the surface layer part of the semiconductor layer 220. Furthermore, since heat generated by laser irradiation is transmitted to the sticking interface of the semiconductor layer 220 and the supporting substrate 500, adhesion of the sticking interface can be enhanced. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005203596(A) 申请公布日期 2005.07.28
申请号 JP20040008981 申请日期 2004.01.16
申请人 SEIKO EPSON CORP 发明人 YASUI ATSUTO
分类号 G02F1/1333;G02F1/1368;H01L21/02;H01L21/20;H01L21/265;H01L21/268;H01L21/336;H01L21/762;H01L27/12;H01L29/786;(IPC1-7):H01L27/12;G02F1/133;G02F1/136 主分类号 G02F1/1333
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