发明名称 METHOD FOR PEELING TRANSFERRED LAYER, THIN-FILM DEVICE AND ITS MANUFACTURING METHOD, ACTIVE MATRIX SUBSTRATE AND ITS MANUFACTURING METHOD, AND ELECTROOPTICAL DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method for peeling a transferred layer that causes less damage to a device and reduces costs, and also to provide a method for manufacturing a thin-film device using the same, the thin-film device, a method for manufacturing an active matrix substrate, the active matrix substrate, and an electrooptical device. SOLUTION: The method for manufacturing the thin-film device includes the steps of: forming a 1st separation layer 120 on a 1st base material 100; forming the thin-film device (140) thereupon; bonding a 2nd base material 180 to the thin-film device; and the 1st separation layer 120 being irradiated with energy to cause a peeling phenomenon in the layer or on the interface and separating the 1st base material 100 from the thin-film device side to transfer the thin-film device to the side of the 2nd base material 180. The step of forming the 1st separation layer 120 comprises steps of: arranging a liquid material containing a silane compound on the 1st base material 100; and heat-treating the liquid material on the 1st base material 100 into an amorphous silicon film. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005202279(A) 申请公布日期 2005.07.28
申请号 JP20040010418 申请日期 2004.01.19
申请人 SEIKO EPSON CORP 发明人 AOKI TAKASHI
分类号 G02F1/1368;G09F9/00;G09F9/30;H01L21/02;H01L21/336;H01L27/08;H01L27/12;H01L29/786;(IPC1-7):G09F9/00;G02F1/136 主分类号 G02F1/1368
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