| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of SOI wafer and a plurality of thereof for adopting the ion implantation peeling method wherein no SOI wafer after peeling off is damaged. SOLUTION: A Bernoulli chuck 21 holds a laminated wafer 10 resulting from laminating an active layer wafer to which rare gas ions are implanted to a support wafer via an oxide film. Then the laminated wafer 10 is put in a quartz-made box-shaped chamber, wherein the wafer 10 is subjected to peeling-off heat treatment. Consequently, part of the active layer wafer of the laminated wafer 10 is exfoliated and an SOI wafer 11 is fallen into a susceptor 16. First, an exfoliated wafer 12 supported by the Bernoulli chuck 21 is recovered and then the SOI wafer on the susceptor 16 is recovered. As a result, the SOI wafer after the exfoliation is not in contact with the exfoliated part of the wafer, the SOI wafer is not damaged and no dust is adhered thereto. COPYRIGHT: (C)2005,JPO&NCIPI
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