| 摘要 |
PROBLEM TO BE SOLVED: To provide a metal contact structure, and a method for manufacturing the metal contact structure. SOLUTION: A metal contact passes through an interlayer dielectric for electrically connected to a metal structure, such as a metal gate electrode 112 in a transistor. A conductive layer 140 is provided between a metal layer 150 and the metal gate 112. The conductive layer provides at least one barrier layer, a bonding layer, or an etching stop layer. The conductive layer is made of an element metal, a metal alloy, a metal nitride, and a metal oxide, or their combination. And the conductive layer may be formed of polysilicon. COPYRIGHT: (C)2005,JPO&NCIPI |
