| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with a temperature detecting function which improves the ESD withstanding level of a temperature detecting diode and is good in temperature detection accuracy. SOLUTION: The semiconductor device 11 comprises an n-channel MOSFET 12, a temperature detecting diode 13, and a protective diode 14 connected between the source S of the MOSFET 12 and the cathode K of the temperature detecting diode 13. This diode 13 is composed of n diodes (n is a natural number) connected in series. The protective diode 14 is composed of two diodes 14a, 14b connected in series in reverse directions. The anodes of both diodes 14a, 14b are connected together, the cathodes are connected to the source S and the cathode K of the temperature detecting diode 13, respectively. COPYRIGHT: (C)2005,JPO&NCIPI |
