METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having a gate insulating film which possesses both a low EOT (equivalent oxide thickness) and electrical stability. SOLUTION: The method to be disclosed is for manufacturing a semiconductor device in which an insulating film is arranged on a silicon layer. The process for forming the insulating film comprises an oxidizing treatment for forming a first layer containing silicon and oxygen on the silicon layer by exposing the surface of the silicon layer to an atmosphere containing oxygen, a first heat treatment for heating the first layer in nitrogen atmosphere after the oxidizing treatment, a nitriding treatment for introducing nitrogen into the first layer after the first heat treatment, and a second heat treatment for heating the first layer in nitrogen atmosphere after the nitriding treatment. COPYRIGHT: (C)2005,JPO&NCIPI