| 摘要 |
PROBLEM TO BE SOLVED: To provide a shape memory alloy with markedly improved etchability and to provide a target and a film each made from the same. SOLUTION: The high-purity shape-memory alloy, the target made from the same, and the film made from the same each contains at most 1,000 wt. ppm of impurity components which are not constituent elements and gas components. The high-purity shape memory alloy, the target, and the film each contains Al and Sn contents of at most 100 wt.ppm respectively in an Ni-Ti-based shape memory alloy and a target made from the same. The high-purity shape memory alloy, the target, and the film each contains S and Cl contents of at most 50 wt. ppm respectively in a Cu-Al shape memory alloy and a target made from the same. The high-purity shape memory alloy, the target made from the same, and the film made from the same each has Al and Cr contents of at most of 100 wt. ppm respectively in an Fe-Mn-based shape memory alloy and a target made from the same. COPYRIGHT: (C)2005,JPO&NCIPI
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