| 摘要 |
<p>Disclosed is a plasma processing apparatus comprising a processing vessel (11) having a supporting stage (13) for supporting a substrate (12) to be processed, a microwave-transmitting window (17) so arranged over the processing vessel as to face the substrate on the supporting stage, a microwave antenna (20) so arranged over the processing vessel corresponding to the microwave-transmitting window for supplying microwaves into the processing vessel, and a microwave source (32) connected to the microwave antenna. The plasma processing apparatus further comprises a field measuring means (25, 26) for measuring the electric field intensity of a microwave supplied by the microwave antenna and a controlling means (32a, 50A) for controlling the microwave source according to the electric field intensity measured by the field measuring means, thereby enabling stable substrate processing.</p> |
