EQUIPMENT AND METHOD FOR PLASMA PROCESSING

摘要

PROBLEM TO BE SOLVED: To provide plasma processing equipment and plasma processing method suitable for a high-speed and very precise etching process.

SOLUTION: The plasma processing equipment comprises a processing chamber 1 which is connected to an evacuation apparatus and hence can reduce the pressure, a gas supply apparatus for supplying a gas to the processing chamber 1, a plasma generating means for generating plasmas inside the processing chamber, and a means 12 for applying high-frequency voltage to a workpiece 10. The plasma processing equipment is equipped with a means 11 and 14 for converting voltage having a pulse waveform or rectangular waveform into one having a sinusoidal waveform. The high-frequency voltage application means 12 applies the converted high-frequency voltage having a sinusoidal waveform to the workpiece.

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