| 摘要 |
A silicon-backed microdisplay with reduced flicker and a protected glass-side conductive layer. The silicon-backed microdisplay includes a silicon die, a silicon-side conductive layer disposed on the silicon die, and a silicon-side passivation layer arranged on the silicon-side conductive layer. The silicon-backed microdisplay also includes a cover glass, a glass-side conductive layer disposed on the cover glass and a glass-side passivation layer of a predetermined material and thickness arranged on the glass-side conductive layer. Liquid crystal material is sandwiched between the glass-side passivation layer and the silicon-side passivation layer in the silicon-backed microdisplay. Visible flicker is suppressed in the microdisplay by selecting a glass-side passivation layer material (for example, CeO<SUB>2</SUB>, In<SUB>2</SUB>O<SUB>3</SUB>, MgO, SnO<SUB>2</SUB>, Ta<SUB>2</SUB>O<SUB>5</SUB>, TiO<SUB>2</SUB>, Y<SUB>2</SUB>O<SUB>3</SUB>, ZnO, SiO<SUB>2</SUB>, Al<SUB>2</SUB>O<SUB>3</SUB>, BeO or MgF<SUB>2</SUB>) and thickness (for example, in the range of 300 angstroms to 900 angstroms) that improve the work function balance between (i) a combination of the glass-side conductive layer and the glass-side passivation layer and (ii) a combination of the silicon-side passivation layer and the silicon-side conductive layer. The presence of a glass-side passivation layer will also help maintain the work function balance by protecting the glass-side conductive layer surface from exposure to impurities.
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