| 摘要 |
A method for fabricating a metal-insulator-metal (MIM) capacitor includes providing a semiconductor substrate having a region where the metal-insulator-metal capacitor is formed; forming an insulating film on the substrate; forming a sacrificial insulating film on the insulating film; forming a mask pattern having a plurality of openings on the sacrificial insulating film that exposes a surface of the sacrificial insulating film within the region where the metal-insulator-metal capacitor is formed; and forming a plurality of sacrificial insulating film patterns by etching using the mask pattern as an etch mask that expose a surface of the insulating film within the region where the metal-insulator-metal capacitor is formed.
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