PRODUCTION METHOD FOR GROUP III NITRIDE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a group III nitride crystal at an increased growth rate. SOLUTION: The production method for a group III nitride crystal causes the crystal to grow by bringing a melt 7 containing a group III element and an alkali metal into contact with nitrogen plasma 8a. In the method, the minimum distance X between the surface of the melt 7 and the surface of a substrate 10 is preferably 50 mm or less. COPYRIGHT: (C)2005,JPO&NCIPI