| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem wherein it has been difficult to provide a higher power laser since a rise in temperature on the side of a light emitting end face melts the end face thereof and so electric power to be supplied is not increased, and thereby to increase the power outputted by a semiconductor light emitting device. SOLUTION: The light emitting end face 110 of a sapphire substrate 101 is formed with a multitude of grooves 120, which results in the formation of a multitude of projections (fins) 130. The groove 120 has a width W of 10μm, a depth D of 30μm, and periodicity T of 20μm, while the projection 130 has a width of 10μm. The repetition of the groove 120 and projection 130 enlarges an effective area for radiation, thereby increasing radiation effect on the side of the light emitting end face of the sapphire substrate 101. As a result, a radiation characteristic of a laser cavity composed principally of an activated layer 104 is improved, and thereby the temperature rise in the light emitting end face is prevented, thus making it possible to prevent the light emitting end face from being melted. Therefore, it has become possible to increase the power to be supplied and thereby to increase the laser output power. COPYRIGHT: (C)2005,JPO&NCIPI
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