| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device for suppressing the formation of voids in a Low-k film, and to provide a substrate-processing device for preventing voids from forming in the Low-k film. SOLUTION: The substrate-processing device 21 is used with a substrate-cleaning section 22, a substrate-heating section 23, and a substrate-carrying means 25. In the substrate-cleaning section 22, a substrate 24 is rotated via a substrate placement table 28 by a substrate placement table rotating means 33. A chemical supplying means 41 is provided for supplying chemicals from the upper portion of the substrate 24, thus jetting one of a cleaning liquid, demineralized water, and IPA onto the substrate 24, while the substrate 24 can be heated by a heater 38 provided on the substrate placement stand 37 in the substrate-heating section 23. Inert gas can be supplied into a heating chamber 35 by an inert gas supply means 39. COPYRIGHT: (C)2005,JPO&NCIPI
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