发明名称 Semiconductor memory device and method of controlling the semiconductor memory device
摘要 It is an object to provide a semiconductor memory device that can conduct the equalizing operation of bit lines with a low current consumption while maintaining a normal accessing speed and the chip area, and a control method thereof. In a semiconductor memory device of the shared sense amplification system, in a predetermined number of times which is (k-1) times or less among k-times of continuous word line selections of a selected memory block, the bit line separation gate of the unselected memory block is rendered conductive in the active period of the equalizing unit after the word line selection. Also, a circuit that equalizes a wiring higher in the capacity component is driven by a higher voltage level according to the wiring capacity component of the sense amplification power supply line and the bit lines, to thereby equalize the power supply line and the bit line in the equal time, thereby being capable of preventing the short-circuiting within the sense amplifier.
申请公布号 US2005157574(A1) 申请公布日期 2005.07.21
申请号 US20050058302 申请日期 2005.02.16
申请人 FUJITSU LIMITED 发明人 KOMURA KAZUFUMI;KATO YOSHIHARU;KAWAMOTO SATORU
分类号 G11C7/00;G11C11/4076;G11C11/4094;(IPC1-7):G11C7/00 主分类号 G11C7/00
代理机构 代理人
主权项
地址