| 摘要 |
A method of fabricating a thin film transistor with multiple gates using a SGS process which is capable of materializing multiple gates without increasing dimensions and a method thereof. The thin film transistor has a thin film transistor using super grain silicon (SGS) crystallization comprising a semiconductor layer formed on an insulating substrate in a zigzag shape, and a gate electrode formed so that it intersects with the semiconductor layer, wherein the semiconductor layer gas a high-angle grain boundary at apart which does not cross the gate electrode.
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