| 摘要 |
<p>The invention relates to the production of colour image sensors on a thinned silicon substrate. According to the invention, one such sensor is produced from a semiconductive wafer (10) comprising a thin active layer (12) on the front face thereof, consisting of a semiconductor material. To this end, layers are etched on the active layer, the wafer is transferred onto a transfer substrate (40) with the front face thereof, the rear face of the semiconductive wafer is thinned, and layers of material are deposited and etched onto the thus thinned rear face. Vertical narrow trenches (20, 22, 24, 26) are forged into the wafer on the front face thereof before it is transferred onto the transfer substrate, said trenches extending inside the wafer at a depth roughly equal to the residual thickness of semiconductive wafer remaining following the thinning operation, and the trenches are filled with a conductive material insulated from the active layer and forming conductive vias (20', 22', 24', 26') between the front face and the rear face of the thinned layer. The trenches are used to establish electrical connections between the front face and the rear face of the thinned wafer. They can also be used as marks for aligning the motifs of the front face with those on the rear face, and can be used to electrically insulate active layer regions from each other.</p> |
