| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device in which a retention characteristic can be improved, and to provide a manufacturing method of the device. <P>SOLUTION: The semiconductor storage device is provided with a trench capacitor TC1 having a storage node electrode 50, a plate electrode 49, and a capacitor insulating film 70 formed of a high dielectric material which is installed in a trench formed in a main surface of a semiconductor substrate 11; an insulating gate-type field effect transistor TS1 formed in the main surface of the semiconductor substrate, a contact part which electrically connects a source S, or a drain D of the insulating gate-type field effect transistor with the storage node electrode; and cap structures 75 which are formed between the contact part and a top of the storage node electrode and a top of the capacitor insulating film in the trench, and operate as barriers inhibiting the high dielectric material of the capacitor insulating film from being diffused to the contact part. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
