| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve a weak point in a Non-Volatile Static Random Access Memory (nvSRAM) using an existing SONOS device using a non-volatile memory element in which an oxide film is laminated instead of an existing SONOS device. <P>SOLUTION: In a semiconductor device, two NMOS transistors and two PMOS transistors, two NMOS pass gates, and two floating gate non-volatile memory elements are composed in nvSRAM unit cells. The two NMOS transistors and the two PMOS transistors form an SRAM latch. The two NMOS pass gates read and write "H" and "L" states formed by the SRAM latch. The two floating gate non-volatile memory device stores each of the "H" and "L" states stored in the SRAM latch when a power supply is off, and are in a split gate form. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
