| 摘要 |
PROBLEM TO BE SOLVED: To form an impurity region having an LDD structure, only through a one-time ion implantation step, without forming a gate spacer film. SOLUTION: The manufacturing method for a MOSFET includes the steps of sequentially forming a gate insulating film and a gate conducting film onto a semiconductor substrate, patterning the gate conducting film to form a first conducting film having a small thickness and a second conducting film having a thickness larger than that of the first gate conducting film, forming an insulating film pattern on a side surface of the second gate conducting film, sequentially eliminating exposed parts of the first gate conducting film and the gate insulating film in an etching step that uses the insulating film pattern as an etching mask, performing an etching step on the insulating film pattern, to also eliminate a gate insulating film on the underside of the first gate conducting film, and carrying out the ion implantation step that makes the first gate conducting film an ion implantation control film for a lightly-doped region, to form a source/drain region composed of a lightly-doped region and a heavily-doped region onto the semiconductor substrate. COPYRIGHT: (C)2005,JPO&NCIPI
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