发明名称 |
Control of hot carrier injection in a metal-oxide semiconductor device |
摘要 |
An MOS device is formed including a semiconductor layer of a first conductivity type, and first and second source/drain regions of a second conductivity type formed in the semiconductor layer proximate an upper surface of the semiconductor layer, the first and second source/drain regions being spaced apart relative to one another. A drift region is formed in the semiconductor layer proximate the upper surface of the semiconductor layer and at least partially between the first and second source/drain regions. An insulating layer is formed on at least a portion of the upper surface of the semiconductor layer and above at least a portion of the drift region. A gate is formed on the insulating layer and at least partially between the first and second source/drain regions. The MOS device further includes a shielding structure formed on the insulating layer above at least a portion of the drift region. The shielding structure is configured such that an amount of hot carrier injection degradation in the MOS device is controlled as a function of an amount of coverage of the shielding structure over an upper surface of the drift region.
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申请公布号 |
US2005156234(A1) |
申请公布日期 |
2005.07.21 |
申请号 |
US20040977732 |
申请日期 |
2004.10.29 |
申请人 |
GAMMEL PETER L.;KIZILYALLI ISIK C.;MASTRAPASQUA MARCO G.;SHIBIB MUHAMMED A.;XIE ZHIJIAN;XU SHUMING |
发明人 |
GAMMEL PETER L.;KIZILYALLI ISIK C.;MASTRAPASQUA MARCO G.;SHIBIB MUHAMMED A.;XIE ZHIJIAN;XU SHUMING |
分类号 |
H01L21/336;H01L29/40;H01L29/41;H01L29/76;H01L29/78;H01L31/113;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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