| 摘要 |
An electrostatic discharge (ESD) protection structure for protecting against ESD events between signal terminals is disclosed. ESD protection is provided in a first polarity, by a bipolar transistor ( 4 C) formed in an n-well ( 64; 164 ), having a collector contact ( 72; 172 ) to one signal terminal (PIN 1 ) and its emitter region ( 68; 168 ) and base ( 66; 166 ) connected to a second signal terminal (PIN 2 ). For reverse polarity ESD protection, a diode ( 25 ) is formed in the same n-well ( 64; 164 ) by a p+ region ( 78; 178 ) connected to the second signal terminal (PIN 2 ), serving as the anode. The cathode can correspond to the n-well ( 64; 164 ) itself, as contacted by the collector contact ( 72; 172 ). By using the same n-well ( 64; 164 ) for both devices, the integrated circuit chip area required to implement this pin-to-pin protection is much reduced.
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