Heterojunction bipolar transistor with monolithically integrated junction field effect transistor and method of manufacturing same

摘要

A semiconductor component includes: a semiconductor substrate ( 110 ); an epitaxial semiconductor layer ( 120 ) above the semiconductor substrate; a bipolar transistor ( 770, 870 ) in the epitaxial semiconductor layer; and a field effect transistor ( 780, 880 ) in the epitaxial semiconductor layer. A portion of the epitaxial semiconductor layer forms a base of the bipolar transistor and a gate of the field effect transistor, and the portion of the epitaxial semiconductor layer has a substantially uniform doping concentration. In the same or another embodiment, a different portion of the epitaxial semiconductor layer forms an emitter of the bipolar transistor and a channel of the field effect transistor, and the different portion of the epitaxial semiconductor layer has a substantially uniform doping concentration that can be the same as or different from the substantially uniform doping concentration of the portion of the epitaxial semiconductor layer.