| 发明名称 |
Copper technology for ULSI metallization |
| 摘要 |
A copper damascene structure formed by direct patterning of a low-dielectric constant material is disclosed. The copper damascene structure includes a tungsten nitride barrier layer formed by atomic layer deposition using sequential deposition reactions. Copper is selectively deposited by a CVD process and/or by an electroless deposition technique.
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| 申请公布号 |
US6919266(B2) |
申请公布日期 |
2005.07.19 |
| 申请号 |
US20010910914 |
申请日期 |
2001.07.24 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
AHN KIE Y.;FORBES LEONARD |
| 分类号 |
H01L21/285;H01L21/288;H01L21/321;H01L21/768;(IPC1-7):H01L21/283 |
主分类号 |
H01L21/285 |
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