Method of forming a semiconductor device including simultaneously forming a single crystalline epitaxial layer and a polycrystalline or amorphous layer

摘要

A method of fabricating a semiconductor device according to the present invention includes a step A of forming a polycrystalline or amorphous preliminary semiconductor layer on a surface of a substrate so as to have an opening portion and a step B of simultaneously forming an epitaxial growth layer on an exposed portion of a surface of the substrate through the opening portion and a non-epitaxial growth layer on the preliminary semiconductor layer using a CVD method while heating the substrate inside a reaction chamber by means of a heat source inside the reaction chamber, the epitaxial growth layer being made of single crystalline semiconductor, and the non-epitaxial growth layer being comprised of a polycrystalline or amorphous semiconductor layer.