| 摘要 |
A semiconductor integrated circuit device endowed with memory circuits achieving high operation margin and low energy consumption with high speed and high integration. Composing a memory cell with a MOSFET having a first threshold voltage corresponding to a first voltage and supplying a selection signal corresponding to said first voltage to a word line by a word driver driven at said first voltage. Corresponding to a second voltage smaller than said first voltage, forming a selection signal sending to said word driver by a decoder comprising MOSFET with a second threshold voltage smaller than said first voltage, operating at said first voltage, and installing a first level shifting circuit including inverter circuits that form a selection signal corresponding to said first voltage by receiving a selection signal corresponding to said second voltage. Thereby, high operation margin and low energy consumption with high speed and high integration can be achieved.
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