| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem in a bipolar transistor providing the collector electrode on the surface, in which the diffusing region which is to become the extraction of electrode must be extended up to a first collector embedding layer provided at the lower part of the collector region, that the collector resistance can be reduced by improving impurity concentration of the first collector embedding layer, but that the width of collector region becomes narrow, and that the dielectric strength becomes deteriorated. SOLUTION: A second collector embedding layer is provided to a first collector embedding layer and a contact of a diffusing region. Moreover, the second collector embedding layer is impurity, having the diffusion coefficient larger than that of the first collector embedding layer and also having higher concentration. The first collector embedding layer adopts impurity having a small diffusion coefficient. Thus, upper diffusion of the first collector embedding layer is controlled, and the second collector embedding layer can be diffused to the upper region. Since the contact resistance with the diffusion region can be reduced, reduction in the collector resistance due to reduction of contact resistance can be realized, while the predetermined dielectric strength is acquired. COPYRIGHT: (C)2005,JPO&NCIPI
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