发明名称 NITRIDE-BASED LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a nitride-based light-emitting element and a method for manufacturing the element. <P>SOLUTION: A substrate, an n-type clad layer, an active layer, a p-type clad layer, and a multiple ohmic contact layer are sequentially stacked, and the multiple ohmic contact layer is a nitride-based light-emitting element formed by a first transparent thin-film layer, an Ag layer, and a second transparent thin-film layer. According to such a nitride-based light-emitting element and a method for manufacturing the element, ohmic contact characteristics for the p-type clad layer are improved, thereby superior current-voltage characteristics are exhibited; and in addition, luminous efficiency of the element is improved by the high light-transmittance of a transparent electrode. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005191572(A) 申请公布日期 2005.07.14
申请号 JP20040371533 申请日期 2004.12.22
申请人 SAMSUNG ELECTRONICS CO LTD;KWANGJU INST OF SCIENCE & TECHNOL 发明人 SONG JUNE-O;SEONG TAE-YEON;LEEM DONG-SUK
分类号 H01L29/10;H01L33/06;H01L33/32;H01L33/42;H01S5/00 主分类号 H01L29/10
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