| 摘要 |
PROBLEM TO BE SOLVED: To provide an electrostatic discharge protection element which is easy to design, suppresses the current concentration on the end of a drain region in the gate widthwise direction, has a high protection performance against ESD and reduces the layout area. SOLUTION: A plurality of mutually parallel gate electrodes 3 are formed on a p-well 2, a source region 4 and a drain region 5 are formed so as to hold a region (channel region) just beneath the gate electrode 3 between them. A central region 7 is formed between two end regions 6 of in each drain region 5 contacting with the channel region. The end edge 7a of the central direction 7 is located in a recessed place from the end edge 6a of the end region 6. A recess 5a is formed in the drain region 5. A silicide layer is formed on the surfaces of the source 4 and contact forming regions 8, 13 but not formed on the surfaces of ballast resistance regions 9, 14, resulting in a silicide blocking region 15. COPYRIGHT: (C)2005,JPO&NCIPI
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