| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device that can inhibit the generation of dark current and white flaws, can pick up an image of excellent picture quality, and can acquire a sufficient handling charge amount for a photoreceptor sensor unit. SOLUTION: In the solid-state imaging device 10, a second conduction type semiconductor region 14 is formed on the surface of a first conduction type charge-storage region 13 of a photoreceptor sensor unit, and a device isolation layer 20 comprised of an insulating layer is embedded in a groove formed on a semiconductor substrate 11. The device isolation layer 20 comprises an upper wide portion 21 and a lower narrow portion 22, wherein a second conduction type semiconductor region 23 is formed around the narrow portion 22 of the device isolation layer 20. COPYRIGHT: (C)2005,JPO&NCIPI
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