发明名称 |
ISOLATION STRUCTURE FOR TRENCH CAPACITORS AND FABRICATION METHOD THEREOF |
摘要 |
This invention relates to a method for self-aligned fabricating an isolation structure of a trench capacitor. The method takes two steps to etch the substrate for forming the shallow trench of the isolation structure, wherein the conductive layer and the collar oxide layer of the trench capacitor remain intact during the etching processes.
|
申请公布号 |
US2005153506(A1) |
申请公布日期 |
2005.07.14 |
申请号 |
US20040904593 |
申请日期 |
2004.11.18 |
申请人 |
CHEN YINAN;HSU PING;LU LI-HAN |
发明人 |
CHEN YINAN;HSU PING;LU LI-HAN |
分类号 |
H01L21/20;H01L21/762;H01L21/8242;H01L27/02;H01L27/108;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|