发明名称 |
Semiconductor device having capacitors for reducing power source noise |
摘要 |
A semiconductor device comprises a BGA substrate having one principal plane furnished with a large number of solder balls, the solder balls constituting a ball grid array; a semiconductor chip mounted on another principal plane of the BGA substrate, the semiconductor chip being electrically connected to the BGA substrate by metal wires; and chip capacitors mounted on the semiconductor chip to reduce power source noise.
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申请公布号 |
US2005151252(A1) |
申请公布日期 |
2005.07.14 |
申请号 |
US20050064822 |
申请日期 |
2005.02.25 |
申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
WATANABE MASAKI;BABA SHINJI |
分类号 |
H01L23/12;H01L23/498;H01L23/50;H01L25/00;(IPC1-7):H01L29/40 |
主分类号 |
H01L23/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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