发明名称 Semiconductor device having capacitors for reducing power source noise
摘要 A semiconductor device comprises a BGA substrate having one principal plane furnished with a large number of solder balls, the solder balls constituting a ball grid array; a semiconductor chip mounted on another principal plane of the BGA substrate, the semiconductor chip being electrically connected to the BGA substrate by metal wires; and chip capacitors mounted on the semiconductor chip to reduce power source noise.
申请公布号 US2005151252(A1) 申请公布日期 2005.07.14
申请号 US20050064822 申请日期 2005.02.25
申请人 RENESAS TECHNOLOGY CORP. 发明人 WATANABE MASAKI;BABA SHINJI
分类号 H01L23/12;H01L23/498;H01L23/50;H01L25/00;(IPC1-7):H01L29/40 主分类号 H01L23/12
代理机构 代理人
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