| 发明名称 |
Process for producing silicon single crystal layer and silicon single crystal layer |
| 摘要 |
A thermal processing operation is performed for a silicon wafer W (silicon single-crystal layer) in an atmosphere gas which is formed by a hydrogen gas or an inert gas or a mixture gas of these gases at a temperature in a range of 600° C. to 950° C. (here, the temperature should not be greater than 950° C.). By doing this, a quality of a surface of the silicon single-crystal layer is improved.
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| 申请公布号 |
US2005153550(A1) |
申请公布日期 |
2005.07.14 |
| 申请号 |
US20040506534 |
申请日期 |
2004.09.03 |
| 申请人 |
SUMITOMO MITSUBISHI SILICON CORPORATION |
发明人 |
SHIBAYAMA TAKASHI;MURAKAMI YOSHIO;SHINGYOJI TAKAYUKI |
| 分类号 |
H01L21/324;C30B33/00;H01L21/322;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01L21/324 |
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