| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for uniforming luminance in the substrate surface of a light-emitting element using a group III-V compound semiconductor. <P>SOLUTION: In the method, vapor phase epitaxy is made to the first layer of the group III-V compound semiconductor expressed by a general expression In<SB>x</SB>Ga<SB>y</SB>Al<SB>z</SB>N (in this case, x+y+z=1, 0<x≤1, 0≤y<1, and 0≤z<1), and vapor phase epitaxy is made to a second layer expressed by a general expression In<SB>u</SB>Ga<SB>v</SB>Al<SB>w</SB>N (in this case, u+v+w=1, 0≤u≤1, 0≤v≤1, and 0≤w≤1), thus manufacturing the group III-V compound semiconductor. In the method for uniforming the luminance in the substrate surface of the light-emitting element, the group III-V compound semiconductor is used, where the group III-V compound semiconductor is manufactured by the method for manufacturing the group III-V compound semiconductor having a process for supplying at least one kind of carrier gas selected from an inert gas, and a group V material without supplying a group III material before the growth of the second layer after the first layer is grown. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
