METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE CRYSTAL OBTAINED BY SUCH METHOD, AND GROUP III NITRIDE SUBSTRATE USING SAME

摘要

In an atmosphere containing nitrogen, a flux containing at least one group III element selected from Ga, Al and In and an alkali metal is caused to contain Mg, and a group III nitride crystal is grown in the resulting flux, thereby forming a group III nitride substrate. Since Mg is a p-type dopant material for the group III nitride crystal, the crystal can still exhibit p-type or semi-insulating electrical characteristics even when Mg is mixed into the crystal. Consequently, mixing of Mg causes no problem in application of the group III nitride crystal to an electronic device. By having the flux contain Mg, the amount of nitrogen dissolved in the flux is increased. Consequently, a crystal can be grown at a high growth rate, thereby improving reproducibility of crystal growth.