发明名称 Method for etching upper metal of capacitator
摘要 A method for etching an upper metal film of a capacitor, enables a safe etching of the upper metal film of a capacitor by exploiting an over-etch step. The method for etching the upper metal film of the capacitor includes the steps of forming a lower metal film, a lower nitride film, an upper metal film, and an upper nitride film on a substrate having a predetermined device formed thereon, and then forming a pattern thereover; etching the upper nitride film with CHF<SUB>3</SUB>, Ar and Cl<SUB>2 </SUB>using the pattern; over etching the upper metal film more than 50% with CHF<SUB>3</SUB>, Ar and N<SUB>2 </SUB>using the pattern; etching the upper metal film with CHF<SUB>3</SUB>, Ar and N<SUB>2 </SUB>using the pattern; and etching the lower nitride film with CHF<SUB>3 </SUB>and Ar using the pattern.
申请公布号 US2005153516(A1) 申请公布日期 2005.07.14
申请号 US20040024727 申请日期 2004.12.30
申请人 DONGBUANAM SEMICONDUCTOR INC. 发明人 YEOUN JO B.
分类号 H01L21/3065;C23F4/00;H01L21/02;H01L21/3213;(IPC1-7):H01L21/824;H01L21/20 主分类号 H01L21/3065
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