<p>The invention relates to a method of forming nanostructures, comprising: the formation of nucleation sites (4) by irradiating a substrate using a silicon or germanium ion beam, and the growth of nanostructures (8) on the nucleation sites thus formed.</p>
申请公布号
WO2005064040(A1)
申请公布日期
2005.07.14
申请号
WO2004FR50743
申请日期
2004.12.21
申请人
COMMISSARIAT A L'ENERGIE ATOMIQUE;MAZEN, FREDERIC;BARON, THIERRY;DECOSSAS, SEBASTIEN;SOUIFI, ABDELKADER
