发明名称 PHOTOSENSITIVE MATERIAL FOR IMMERSION PHOTOLITHOGRAPHY
摘要 When rays of light converge inside a photosensitive material at angles larger than 70 degrees, one polarization of the light may fail to produce the desired image contrast in conventional exposure media. This invention describes a material which may be applied to a semiconductor wafer surface which ensures that the photosensitive material is exposed principally by light polarized parallel to the semiconductor wafer surface.
申请公布号 US2005153235(A1) 申请公布日期 2005.07.14
申请号 US20040775313 申请日期 2004.02.10
申请人 LEVENSON MARC D. 发明人 LEVENSON MARC D.
分类号 G03C1/76;G03F7/00;G03F7/004;G03F7/11;G03F7/20;(IPC1-7):G03C1/76 主分类号 G03C1/76
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