发明名称
摘要 PROBLEM TO BE SOLVED: To achieve a highly accurate formation of a pit and/or a group comprising the optimum shape by calibrating a detection accuracy of the developing condition of a resist mask plate after the detection of the quantity of light of diffraction light of a laser light obtained from an uneven pattern. SOLUTION: In addition to the structure of the conventional developer, this developer 30 is so arranged to input an output of a second detector 18 not only to a comparison part 19 but also to a control part 32 and is provided with a monitor 31 on the output side of the comparison part 19. According this invention, a laser light irradiates an uneven pattern of a calibration board in which the uneven pattern of a specific state is formed at the same position as a monitoring area of a resist layer comprising a photoresist formed on one surface of a board based on a signal identical or similar to a record signal to detect the quantity of the diffraction light of the laser light obtained from the uneven pattern. Thereafter, from the results of the detection, the detection accuracy of the developing condition of the resist mask in the developer is calibrated.
申请公布号 JP3672142(B2) 申请公布日期 2005.07.13
申请号 JP19970001259 申请日期 1997.01.08
申请人 发明人
分类号 G01B11/24;G01B11/245;G01N21/88;G01N21/93;G01N21/95;G03F7/26;G11B7/26;(IPC1-7):G01N21/95 主分类号 G01B11/24
代理机构 代理人
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