发明名称 |
THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD OF THE SAME |
摘要 |
A method of manufacturing a thin film transistor capable of simplifying a substrate structure and a manufacturing process is disclosed. The method of manufacturing a thin film transistor array substrate includes involves a three-round mask process, which includes: forming a gate pattern on a substrate; forming a gate insulating film on the substrate having the gate pattern thereon; forming a source/drain pattern and a semiconductor pattern; forming a passivation film to protect the thin film transistor on an entire surface of the substrate; forming a photo-resist pattern on the passivation film; patterning the passivation film using the photo-resist pattern to form a passivation film pattern; and forming a transparent electrode pattern being extended from a lateral surface of the passivation film pattern and formed at an area except for the passivation film pattern. |
申请公布号 |
KR100500779(B1) |
申请公布日期 |
2005.07.12 |
申请号 |
KR20030070698 |
申请日期 |
2003.10.10 |
申请人 |
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发明人 |
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分类号 |
H01L29/786;G02F1/136;G02F1/1362;G02F1/1368;G09F9/30;G09F9/35;H01L21/00;H01L21/027;H01L21/336;H01L21/70;H01L21/768;H01L21/77;H01L21/84;H01L27/12;(IPC1-7):H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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