发明名称 |
Self-aligned magnetic clad write line and its method of formation |
摘要 |
A self-aligned magnetic clad bit line structure ( 274 ) for a magnetic memory element ( 240 a) and its method of formation are disclosed, wherein the self-aligned magnetic clad bit line structure ( 274 ) extends within a trench ( 258 ) and includes a conductive material ( 264 ), magnetic cladding sidewalls ( 262 ) and a magnetic cladding cap ( 252 ). The magnetic cladding sidewalls ( 262 ) at least partially surround the conductive material ( 264 ) and the magnetic cladding cap ( 252 ) is substantially recessed within the trench with respect to the top of the trench.
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申请公布号 |
US6916669(B2) |
申请公布日期 |
2005.07.12 |
申请号 |
US20030378348 |
申请日期 |
2003.03.03 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
JONES ROBERT E.;BARRON CAROLE C.;LUCKOWSKI ERIC D.;MELNICK BRADLEY M. |
分类号 |
H01L27/105;H01L21/8246;H01L27/22;H01L43/08;(IPC1-7):H01L21/00;H01L21/20 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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