发明名称 Semiconductor device and semiconductor device module
摘要 A control output signal is supplied to a gate electrode of the transistor which is an insulated gate transistor from a control signal output terminal of a control device, however, with regard to the insulated gate transistor, a control output signal is also influenced when that transistor is short-circuited, and a signal waveform different from that in a normal operating state occurs. With employing this, the short-circuit is detected by monitoring the control output signal of the insulated gate transistor, and in case of the short-circuit, the short-circuit protection of the insulated gate transistor is performed by forcing the control device to stop that control output signal.
申请公布号 US2005146823(A1) 申请公布日期 2005.07.07
申请号 US20040023590 申请日期 2004.12.29
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 SAKATA HIROSHI;TANAKA TOMOFUMI
分类号 H01L27/04;H01L21/822;H02H7/08;H02M1/00;H02M7/537;H03K17/0812;(IPC1-7):H02H3/00 主分类号 H01L27/04
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