| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve a resist pattern obtained by an immersion lithography. <P>SOLUTION: A method of forming the pattern includes a step of forming a resist film 102 on a substrate 101 and a step of exposing the surface of the formed resist film 102 with an aqueous solution 103 containing an acid compound having a hydrophilic group, such as, for example, an acetic acid. Then, in the state that an immersion solution 104 is arranged on the resist film 102 exposed to the aqueous solution 103, an exposure light 105 is selectively irradiated to the resist film 102, and pattern exposure is performed, then, the resist film 102 is developed to which the pattern exposure is performed, and the resist pattern 102 is formed from the resist film 102. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
