GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To form a gallium nitride-based compound semiconductor layer having a predetermined conduction property without being influenced by an error in producing stock gas even after a cylinder of the stock gas is exchanged by improving the reproducibility of an n-type doping concentration. SOLUTION: A part of a gallium nitride-based compound semiconductor multilayer film is formed accompanied by a growing mechanism that the part of the gallium nitride-based compound semiconductor multilayer film is doped with silicon in accordance with the surface reaction-controlled rate. Alternatively, the part is doped with silicon in a temperature region where the reciprocal number (1/T) of a substrate temperature is larger than 8.1(×10-4K-1) and where a doping concentration is alterable/controllable depending on the substrate temperature. COPYRIGHT: (C)2005,JPO&NCIPI