发明名称 |
PATTERNED DEPOSITION SOURCE UNIT AND DEPOSITION METHOD USING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a patterned deposition source unit for forming a thin film on a substrate and a deposition method using the same. SOLUTION: The patterned deposition source unit includes a main body 102 that includes a loading section 108 for loading a deposition material 110 and a cover unit 104, which covers the loading section 108 and has a plurality of line shaped openings. The deposition material vaporized through line shaped openings of the cover unit 104 can be vertically deposited on the substrate which moves back and forth over the main body 102. The method enables the improvement in the uniformity of a thin film by preventing dispersion of the deposition material in a conventional depositor, and the improvement in the density of a thin film by increasing vapor flux per unit area of vaporisation atom by reducing the distance between the deposition source unit and the substrate. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2005179770(A) |
申请公布日期 |
2005.07.07 |
申请号 |
JP20040229574 |
申请日期 |
2004.08.05 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
SANG-JUN CHOI;KIM YOUNG IL;MA DONG-JOON |
分类号 |
H01L21/203;C23C14/24;(IPC1-7):C23C14/24 |
主分类号 |
H01L21/203 |
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