WATER-SOLUBLE MATERIAL, CHEMICALLY AMPLIFIED RESIST AND METHOD FOR FORMING PATTERN BY USING THE SAME

摘要

PROBLEM TO BE SOLVED: To obtain a miniaturized fine pattern having a favorable figure and causing no surface hardly-soluble layer during development.

SOLUTION: A water-soluble film 103 containing a water-soluble polymer, an acid generating agent and a compound which produces an inclusion compound including the acid generating agent, is formed on a resist film 102. The resist film 102 is irradiated via the water-soluble film 103 with exposure light 105 from a KrF excimer laser having 0.68 NA through a mask 104 to carry out pattern exposure. Then the resist film 102 after pattern exposure is baked by a hot plate at 105°C for 60 seconds. Sequentially, after the water-soluble film 103 is removed with water, the baked resist film 102 is developed to obtain a resist pattern 102a having a favorable figure comprising an unexposed part of the resist film 102.

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