WAFER TEMPERATURE TRAJECTORY CONTROL METHOD FOR HIGH TEMPERATURE RAMP RATE APPLICATIONS USING DYNAMIC PREDICTIVE THERMAL MODELING

摘要

The present invention is directed to a method for thermally processing a substrate in a thermal processing system. The method comprises providing a target substrate temperature and generating a move profile of the substrate within the thermal processing system. An amount of heat is provided to the substrate in the first position, and one or more temperatures associated with one or more respective locations on the substrate are measured in the first position, and a theoretical position of the substrate generated based on the one or more measured temperatures, the position of the substrate, and a thermal model of the thermal processing system and the substrate. A predicted temperature profile of the substrate is generated in accordance with the move profile of the substrate, wherein the predicted temperature profile is based on the one or more measured temperatures and the theoretical position of the substrate, and a maximum predicted temperature is determined based on the predicted temperature profile. The substrate is consequently moved to the second position according to the move profile when the maximum predicted temperature is greater than or equal to the target substrate temperature. An offset may furthermore be employed to correct for errors in the theoretical position.